ar c hive inf o rmati o n archive information 1 mhl9125 motorola rf device data the rf line designed specifically for linear amplifier applications in the cellular frequency band. internal dc blocking on rf ports reduces external component count and related circuit area. this device can be easily combined for higher power applications. ? supply voltage: 15 vdc ? third order intercept: 43 dbm typ ? power gain: 20 db typ (@ f = 900 mhz) ? excellent phase linearity and group delay characteristics ? 50 ohm input/output impedances absolute maximum ratings (t c = 25 c unless otherwise stated) rating symbol value unit dc supply voltage v cc 18 vdc rf input power p in +20 dbm operating case temperature range t c C20 to +100 c storage temperature range t stg C40 to +100 c electrical characteristics (v cc = 15 vdc, t c = 25 c; 50 ? system, unless otherwise noted) characteristic symbol min typ max unit supply current i dc 700 760 ma power gain (1) (f = 900 mhz) p g 19 20 21 db absolute phase variation (1) (f = 900 mhz) ? 8 18 deg. gain flatness (f = 800C960 mhz) g f 0.5 0.75 db power output @ 1 db comp. (f = 900 mhz) p out 1 db 30 31 dbm input vswr (f = 800C920 mhz) (f = 920C960 mhz) vswr in 1.25:1 1.50:1 1.5:1 1.9:1 output vswr (f = 800C960 mhz) vswr out 1.2:1 1.5:1 third order intercept (f1 = 879 mhz, f2 = 884 mhz) ito 42 43 dbm noise figure (f = 960 mhz) nf 7.5 9.5 db (1) consult factory for tighter gain and/or phase windows. order this document by mhl9125/d semiconductor technical data 1.3 w, 20 db 800C960 mhz linear amplifier case 448C02, style 2 ? motorola, inc. 1998 rev 2
ar c hive inf o rmati o n archive information mhl9125 2 motorola rf device data figure 1. mhl9125 external connections (case 448C02, style 2)
3 mhl9125 motorola rf device data notes
mhl9125 4 motorola rf device data package dimensions case 448C02 issue b CaC n u g k q r CbC 5 pl d 5 pl j CtC c e h
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